HRLD1B8N10K Datasheet, PDF (2/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Electrical Characteristics T_J=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS
R_DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V_DS = V_GS, I_D = 250 Ꮃ
V_GS = 10 V, I_D = 2.7 A
V_GS = 4.5 V, I_D = 2 A
1.2
--
2.8
V
--
140 180 mŸ
--
185 240 mŸ
Off Characteristics
BV_DSS
I_DSS
I_GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V_GS = 0 V, I_D = 250 Ꮃ
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, T_J = 125୅
V_GS = ρ16 V, V_DS = 0 V
100 --
--
V
--
--
1
Ꮃ
--
-- 100 Ꮃ
--
-- ρ10 Ꮃ
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 30 V, V_GS = 0 V,
f = 1.0 MHz
--
440 570 Ꮔ
--
36
47
Ꮔ
--
20
26
Ꮔ
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
--
V_DS = 50 V, I_D = 2.7 A,
R_G = 25 Ÿ
--
--
(Note 4,5) _--
V_DS = 80 V, I_D = 2.7 A,
--
V_GS = 10 V
--
(Note 4,5) _--
12
34
Ꭸ
16
42
Ꭸ
55 120 Ꭸ
20
50
Ꭸ
11.5 15 nC
1.5
--
nC
2.5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 2.7 A, V_GS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 2 A, V_GS = 0 V
--
di_F/dt = 100 A/ȝV (Note 4) _--
--
2.7
A
--
10
--
1.1
V
43
--
Ꭸ
73
--
nC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I_SD”$9_DD=25V, R_G=25:, Starting T_J =25qC
3. I_SD”$di/dt”$ȝV, V_DD”%9_DSS , Starting T_J =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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