HRLD1B8N10K Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

HRLD1B8N10K / HRLU1B8N10K
100V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 11.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 140 Pȍ (Typ.) @V_GS=10V
‰ Lower R_DS(ON) : 185 Pȍ (Typ.) @V_GS=4.5V
‰ Built-in ESD Diode
‰ 100% Avalanche Tested
Jan 2015
BV_DSS = 100 V
R_{DS(on) typ} = Pȍ
I_D = 2.7 A
D-PAK I-PAK
2
1
1
3
2
3
HRLD1B8N10K HRLU1B8N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 70୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (T_A = 25୅)*
Power Dissipation (T_C = 25୅)
- Derate above 25୅
100
2.7
2.1
10.0
ρ16
22
2.7
2.5
33
0.26
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient*
R_șJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
3.8
50
110
Units
V
A
A
A
V
mJ
A
W
W
W/୅
୅
୅
Units
୅/W
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