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HFS2N65S_16 Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.9 A͑
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250ᒺ
650
Ô©BVDSS Breakdown Voltage Temperature
/Ô©TJ Coefficient
ID = 250 ᒺ5HIHUHQFHGWRഒ
--
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V͑
--
VDS = 520 V, TC = 125ఁ͑
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz͑
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 1.8 A,
--
RG = 25 ͑ש
--
͑
--
 1RWH 
--
VDS = 520V, ID = 1.8 A,
--
VGS = 10 V
--
 1RWH 
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 1.8 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.8 A, VGS = 0 V
--
diF/dt = 100 A/ȝV (Note 4)
--
Typ Max Units
--
4.0
9
5.0 6.5
à´µ
--
--
9
0.6
-- 9ഒ
--
1
ᒺ
--
10
ᒺ
-- 100 ᒹ
-- -100 ᒹ
280 365 ᓂ
37
48
ᓂ
6.0 8.0 ᓂ
9
28
ᓩ
25
60
ᓩ
24
58
ᓩ
28
66
ᓩ
6.0 8.0 Q&
1.3
--
Q&
2.6
--
Q&
-- 1.8
$
-- 7.2
--
1.4
9
230 --
ᓩ
1.0
--
Ë©&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=1.8A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
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