|
HFS2N65S_16 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
|
Sep 2009
HFS2N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ È
ID = 1.8 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 6.0 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
650
ID
Drain Current
â Continuous (TC = 25à´)
1.8*
Drain Current
â Continuous (TC = 100à´ÍÍ
1.1*
IDM
Drain Current
â Pulsed
(Note 1)
7.2*
VGS
Gate-Source Voltage
Ï30
EAS
Single Pulsed Avalanche Energy
(Note 2)
100
IAR
Avalanche Current
(Note 1)
1.8
EAR
Repetitive Avalanche Energy
(Note 1)
5.4
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25à´ÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ- Derate above 25à´
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
23
0.18
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
5.5
62.5
Units
9
$
$
$
9
P-
$
P-
9QV
:
:à´
à´
à´
Units
à´:
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÎÎΡÍͣͪ͡͡Í
|
▷ |