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| HFD630A Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 200V N-Channel MOSFET | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 4.5 A
2.0
-- 4.0
V
-- 0.34 0.4
Â
gFS Forward Transconductance
VDS = 10 V, ID = 4.5 A
--
5.5
--
S
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 200 V, VGS = 0 V
VDS = 160 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
200 --
--
V
--
--
1
á³
--
--
10
á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
420 525 á
--
99 128 á
--
24
28
á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 100 V, ID = 9 A,
RG = 25 Â
VDS = 160 V, ID = 9 A
VGS = 10 V
--
11
--
á¨
--
91
--
á¨
--
70
--
á¨
--
72
--
á¨
--
12 17 nC
--
2.4
--
nC
--
3.5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
--
9
A
--
--
36
--
--
1.4
V
-- 158 --
á¨
-- 0.97 --
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=4.3mH, IAS=9A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
4. Essentially Independent of Operating Temperature
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍͲΦÎΦΤΥÍͣͦ͢͡Í
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