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HFD630A Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 200V N-Channel MOSFET | |||
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August 2015
HFD630A / HFU630A
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ È
ID = 9.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 12 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD630A
1
2
3
HFU630A
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25à
)
Power Dissipation (TC = 25à
)
- Derate above 25à
200
9.0 *
5.7 *
36 *
Ï30
232
9.0
9.5
2.5
45
0.36
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
Junction-to-Case
RÈJA
Junction-to-Ambient*
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.77
50
110
Units
V
A
A
A
V
mJ
A
mJ
W
W
W/à
à
à
Units
à
/W
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