HFD1N65 Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Electrical Characteristics T_C=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
V_{GS Gate Threshold Voltage}
V_DS = V_GS, I_D = 250 ㎂
2.5
R_DS(ON) Static Drain-Source
On-Resistance
V_GS = 10 V, I_D = 0.4 A
--
Off Characteristics
BV_{DSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂}
650
ΔBV_DSS Breakdown Voltage Temperature
/ΔT_J Coefficient
I_D = 250 ㎂, Referenced to25℃
--
I_{DSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V}
--
V_DS = 520 V, T_C = 125℃
--
I_GSSF Gate-Body Leakage Current,
Forward
V_GS = 30 V, V_DS = 0 V
--
I_GSSR Gate-Body Leakage Current,
Reverse
V_GS = -30 V, V_DS = 0 V
--
Dynamic Characteristics
C_{iss Input Capacitance}
--
C_oss Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
Switching Characteristics
t_{d(on) Turn-On Time}
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS = 325 V, I_D = 0.8 A,
--
R_G = 25 Ω
--
--
(Note 4,5)
--
V_DS = 520 V, I_D = 0.8 A,
--
V_GS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 0.8 A, V_GS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 0.8 A, V_GS = 0 V
--
di_F/dt = 100 A/μs (Note 4)
--
Typ Max Units
--
4.5
V
10.5 13.5 Ω
--
--
V
0.65 -- V/℃
--
1
㎂
--
10
㎂
-- 100 ㎁
-- -100 ㎁
150 195 ㎊
23
30
㎊
5.5 7.0 ㎊
12
30
㎱
40 140 ㎱
20
60
㎱
30
80
㎱
4.0 5.5 nC
1.0
--
nC
2.0
--
nC
-- 0.8
A
-- 3.2
--
1.4
V
160 --
㎱
0.45 --
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=115mH, I_AS=0.8A, V_DD=50V, R_G=25Ω, Starting T_J =25°C
3. I_SD≤0.8A, di/dt≤300A/μs, V_DD≤BV_DSS , Starting T_J =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Apr 2006