|
HFD1N65 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
|
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 10.5 Ω
ID = 0.8 A
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Robust Gate Oxide Technology
ï± Very Low Intrinsic Capacitances
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 4.0 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V
ï± 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N65
1
2
3
HFU1N65
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
650
ID
Drain Current
â Continuous (TC = 25â)
0.8
Drain Current
â Continuous (TC = 100â)
0.5
IDM
Drain Current
â Pulsed
(Note 1)
3.2
VGS
Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
40
IAR
Avalanche Current
(Note 1)
0.8
EAR
Repetitive Avalanche Energy
(Note 1)
3.1
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25â) *
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
2.5
31
0.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.0
50
110
Units
â/W
â SEMIHOW REV.A0,Apr 2006
|
▷ |