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| HCS80R250T Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel Super Junction MOSFET | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 9 A
2.5
-- 4.5
V
-- 0.22 0.25 Â
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 800 V, VGS = 0 V
VDS = 800 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
800 --
--
V
--
--
1
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
-- 2550 --
á
-- 260 --
á
--
15
--
á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 18 A,
RG = 25 Â
VDS = 640 V, ID = 18 A
VGS = 10 V
--
64
--
á¨
--
28
--
á¨
-- 180 --
á¨
--
19
--
á¨
--
58
--
nC
--
15
--
nC
--
23
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 18 A, VDD = 400 V
diF/dt = 100 A/ÈV
--
--
18
A
--
--
54
--
--
1.3
V
-- 400 --
á¨
--
4
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDÂ,D, di/dt Â$XV9DD Â%9DSS, Starting TJ = 25 à
4. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
5. Essentially Independent of Operating Temperature Typical Characteristics
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍͲΦÎΦΤΥÍͣͧ͢͡Í
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