HCS80R250T Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel Super Junction MOSFET

August 2016
HCS80R250T
800V N-Channel Super Junction MOSFET
Description
‰ Very Low FOM (R_DS(on) X Q_g)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
850
18
0.25
58
Unit
V
A
ȍ
nC
Features
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ Motor Control & LED Lighting Power
‰ DC-DC Converters
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt ruggedness, V_DS=0…480V
Reverse diode dv/dt, V_DS=0…480V, I_DS”I_D
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
ρ30
18 *
11*
54 *
280
7.5
0.5
50
15
34
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Units
V
V
A
A
A
mJ
A
mJ
V/ns
V/ns
W
୅
୅
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.67
80
Units
୅/W
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