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| HCS70R350E Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel Super Junction MOSFET | |||
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Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ã
VGS = 10 V, ID = 6 A
2.5
-- 4.5
V
--
0.3 0.35 â¦
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ã
VDS = 700 V, VGS = 0 V
VDS = 560 V, TJ = 125â
VGS = ±30 V, VDS = 0 V
700
--
--
V
--
--
1
ã
--
-- 100 ã
--
-- ±100 ã
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
-- 1000 --
ã
--
64
--
ã
--
2.1
--
ã
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 350 V, ID = 12 A,
RG = 25 â¦
VDS = 560 V, ID = 12 A
VGS = 10 V
--
38
--
ã±
--
19
--
ã±
--
56
--
ã±
--
16
--
ã±
--
16 21 nC
--
5.7
--
nC
--
3.8
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 6 A, VGS = 0 V
diF/dt = 100 A/μs
--
--
12
A
--
--
36
--
--
1.4
V
-- 285 --
ã±
--
2.9
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3.2A, VDD=50V, RG=25â¦, Starting TJ =25°C
3. Pulse Test : Pulse Width ⤠300μs, Duty Cycle ⤠2%
â SEMIHOW REV.A0, July 2016
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