HCS70R350E Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel Super Junction MOSFET

July 2016
HCS70R350E
700V N-Channel Super Junction MOSFET
Features
 Very Low FOM (R_DS(on) X Q_g)
 Extremely low switching loss
 Excellent stability and uniformity
 100% Avalanche Tested
 Higher dv/dt ruggedness
Application
 Lighting
 Hard Switching PWM
 Server Power Supply
 Charger
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
750
12
0.35
16
Unit
V
A
Ω
nC
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
dv/dt
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, V_DS=0…480V
Reverse diode dv/dt, V_DS=0…480V, I_DS≤I_D
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
±30
12.0 *
7.6 *
36.0 *
215
50
15
32
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.9
62.5
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0, July 2016