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| HCS60R350T Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 3.8 A
2.5
-- 4.5
V
--
0.3 0.35 Â
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
600 --
--
V
--
--
10
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
900 1170 á
--
60
78
á
--
7
9.5
á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 11 A,
RG = 25 Â
VDS = 480 V, ID = 11 A
VGS = 10 V
--
30
70
á¨
--
17
44
á¨
--
70 150 á¨
--
17
44
á¨
-- 17.5 23 nC
--
5.0
--
nC
--
5.5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 11 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 11 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
--
11
A
--
--
33
--
--
1.4
V
-- 280 --
á¨
--
2.8
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=4.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍÍ»ÎÎÍͣͧ͢͡Í
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