HCS60R350T Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

Jan 2016
HCS60R350T
600V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (R_DS(on) X Q_g)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
650
11
0.35
17.5
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings T_J=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
600
ρ30
11 *
7*
33 *
300
31
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
V
A
A
A
mJ
W
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.0
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͧ͑͢͡