HCD7N70S Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Electrical Characteristics T_J=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
Static Drain-Source
R_{DS(ON) On-Resistance}
V_DS = V_GS, I_D = 250 Ꮃ
V_GS = 10 V, I_D = 2.3 A
2.5
-- 4.5
V
-- 0.95 1.1
Ÿ
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 Ꮃ
700
I_DSS Zero Gate Voltage Drain Current ^{VDS = 700 V, VGS = 0 V}
--
V_DS = 560 V, T_J = 125୅
--
I_GSS Gate-Body Leakage Current
V_GS = ρ20 V, V_DS = 0 V
--
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = 100 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
--
V_DS = 350 V, I_D = 2.3 A,
--
R_G = 10 Ÿ
(Note 4,5) ^--
--
V_DS = 560 V, I_D = 2.3 A
--
V_GS = 10 V
--
(Note 4,5) _--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 2.3 A, V_GS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 2.3 A, V_GS = 0 V
--
di_F/dt = 100 A/ȝV (Note 4) _--
--
--
V
--
10
Ꮃ
-- 100 Ꮃ
-- ρ100 Ꮂ
340 440 Ꮔ
20
26
Ꮔ
5.0 6.5 Ꮔ
5.2
--
Ÿ
20
50
Ꭸ
25
60
Ꭸ
60 130 Ꭸ
30
70
Ꭸ
9.0 12 nC
2.0
--
nC
3.0
--
nC
--
5
A
--
13
--
1.2
V
150 --
Ꭸ
1.1
--
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I_AS=1.5A, V_DD=50V, R_G=25:, Starting T_J =25qC
3. I_SD”$di/dt”$ȝV, V_DD”%9_DSS , Starting T_J =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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