HCD7N70S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

HCD7N70S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 9 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 0.95 ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
June 2015
BV_DSS = 700 V
R_{DS(on) typ} ȍ
I_D = 5.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
5.0
3.2
13.0
ρ20
40
1.2
0.1
50
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
28
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
୅
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
Junction-to-Case
R_șJA
Junction-to-Ambient*
Soldering temperature, wave soldering
T_sold
only allowed at leads
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
60.5
260
Units
୅/W
୅
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝ͻΦΟΖ͑ͣͦ͑͢͡