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| 2N3960_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor | |||
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2N3960
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 µA
12
Volts
Collector-Base Cutoff Current
ICBO VCB = 20 Volts
10
µA
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX1
ICEX2
ICEX3
IEBO
VCE = 10Volts, VBE = 0.4Volts
VCE = 10Volts, VBE = 2 Volts
VCE = 10Volts, VBE = 2 Volts,
TA = 150°C
VEB = 4.5 Volts
1
µA
5
nA
5
µA
10
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude â Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Pulse Test: Pulse Width = 300 µs, Duty Cycle ⤠2.0%
Symbol
hFE1
hFE2
hFE3
hFE4
VBE1
VBE2
VCEsat1
VCEsat2
Test Conditions
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 30 mA
IC = 1 mA, IB = 0.1 mA
IC = 30 mA, IB = 3 mA
Min
Typ
Max Units
40
60
300
30
30
0.8
1.0
Volts
0.2
0.3
Volts
Symbol
Test Conditions
Min
Typ
Max Units
f = 100 MHz
|hFE|1 VCE = 4 Volts, IC = 5 mA,
13
|hFE|2 VCE = 4 Volts, IC = 10 mA,
14
|hFE|3 VCE = 4 Volts, IC = 30 mA,
12
COBO
VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
2.5
pF
Copyrightï 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2
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