2N3960_02 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3960J)
• JANTX level (2N3960JX)
• JANTXV level (2N3960JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
2N3960
Silicon NPN Transistor
Data Sheet
Applications
• General purpose
• Low power switching transistor
• NPN silicon transistor
Please contact Semicoa for special configurations
www.SEMICOA.com or [phone]
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T_A = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V_CEO
V_CBO
V_EBO
P_T
T_J
T_STG
Features
• Hermetically sealed TO-18 metal can
• Also available in chip configuration
• Chip geometry 0003
• Reference document:
MIL-PRF-19500/399
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
T_C = 25°C unless otherwise specified
Rating
Unit
12
Volts
20
Volts
4.5
Volts
400
2.3
-65 to +200
mW
mW/°C
°C
-65 to +200
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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