D1213UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1213UK
10
100
8
80
6
Pout
60
Drain Efficiency
W
4
2
f = 500MHz
Idq = 0.5A
Vds = 7.2V
40 ^%
20
0
0
0
0.5
1
1.5
2
2.5
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
10
11
8
10
Pout
6
W
4
2
f = 500MHz
Idq = 0.5A
Vds = 7.2V
9
Gain
8 ^dB
7
0
6
0
0.5
1
1.5
2
2.5
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
-15
-20
-25
IMD3
dBc ^-30
-35
-40
f1 = 500.0 MHz
f2 = 500.1 MHz
Vds = 7.2V
Idq = 0.5A
-45
0
2
4
6
8
10
Pout W PEP
Figure 3 – IMD vs. Output Power.
D1213UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z_S
Z_L
MHz
Ω
Ω
500
2.3 - j0.4 2.1 - j1.9
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Prelim. 7/99