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D1213UK Datasheet, PDF (1/4 Pages) Seme LAB – METAL GATE RF SILICON FET
TetraFET
D1213UK
MECHANICAL DATA
D
E
B
8
7
6
F
5
O
J
K
L
C
1
2
A
3
4
Q
N
M
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 5 Source
PIN 2 Drain
PIN 6 Gate
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM mm
Tol. Inches Tol.
A
6.47
0.08
.255
.003
B
0.76
0.08
.030
.003
C
45°
5°
45°
5°
D
0.76
0.08
.030
.003
E
1.14
0.08
.045
.003
F
2.67
0.08
.105
.003
G 11.73 0.13
.462
.005
H
8.43
0.08
.332
.003
I
7.92
0.08
.312
.003
J
0.20
0.02
.008
.001
K
0.64
0.02
.025
.001
L
0.30
0.02
.012
.001
M
3.25
0.08
.128
.003
N
2.11
0.08
.083
.003
O 6.35SQ 0.08 .250SQ .003
P
1.65
0.51
.065
.020
Q
0.13
max
.005
max
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
58W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
20A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99