D1012UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1012UK
140
14
140
70
120
13
120
60
100
12
100
50
P _out ⁸⁰
4 0 _{D r a in E ffic ie n c y}
P _out 80
1 1 _{G a in}
W
60
30 %
W
60
10 ^dB
f= 500M H z
40
20
I _{d q} = 1 .2 A
20
V ds = 28V
10
0
0
0
2
4
6
8
10
12
14
P _in W
Pout
D r a in E ffic ie n c y
40
f= 500M H z
9
Id _q = 1 .2 A
20
V ds = 28V
8
0
7
0
2
4
6
8
10
12
14
P _in W
Figure 1 - Power Output and Efficiency
vs. Power Input.
Figure 2 - Power Output & Gain vs.
Power Input.
-1 5
-2 0
-2 5
IM D 3
d B c ^{-3 0}
-3 5
-4 0
-4 5
0
f ₁ = 5 0 0 .0 M H z
f ₂ = 5 0 0 .1 M H z
V _ds = 28V
Id _q = 1 .2 A
20
40
60
80
100
120
140
P _out W PEP
Figure 3 - IMD vs. Output Power.
D1012UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
500
Z_WS
2.0 - j2.2
Z_WL
2.6 - j0.6
N.B. Impedances measured terminal to
terminal
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 11/99