D1012UK Datasheet, PDF (1/4 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1012UK
MECHANICAL DATA
B
(4 pls)
C
G
(t yp )
2
3
1
E
AD
5
4
I
F
PIN 1
PIN 3
PIN 5
NM
H
DH
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM mm
A 13.97
B
5.72
C
45°
D
9.78
E 1.65R
F 23.75
G 1.52R
H 30.48
I
19.17
J
0.13
K
2.54
M
1.52
N
5.08
Tol. Inches Tol.
0.26 0.550 0.010
0.13 0.225 0.005
5°
45°
5°
0.13 0.385 0.005
0.13 0.065R 0.005
0.13 0.935 0.005
0.13 0.060R 0.005
0.13 1.200 0.005
0.26 0.755 0.010
0.02 0.005 0.001
0.13 0.100 0.005
0.13 0.060 0.005
0.50 0.200 0.020
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
290W
BV_DSS
Drain – Source Breakdown Voltage *
70V
BV_GSS
Gate – Source Breakdown Voltage *
±20V
I_D(sat)
Drain Current *
15A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone [phone]. Fax [phone].
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Prelim. 11/99