BFX38_02 Datasheet, PDF (3/3 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX38
BFX39
BFX40
BFX41
f_T
C_EBO
C_CBO
t_on
t_s
t_f
Parameter
Transitions Frequency
Emitter - Base Capacitance
Collector - Base Capacitance
Turn-on time
Storage Time
Fall Time
Test Conditions
I_C = -50mA
f =100MHz
V_CE = -10V
I_C = 0
f =1MHz
V_EB = -0.5V
I_E = 0
f =1MHz
V_CB = -0.5V
I_C = - 500mA V_CC = -30V
I_B1 = -50mA
I_C = - 500mA V_CC = - 30V
I_B1 = I_B2 = -50mA
I_C = - 500mA V_CC = - 30V
I_B1 = - I_B2 = -50mA
* Pulsed: pulse duration = 300µs, duty cycle = 1%
Min.
100
Typ.
150
Max. Unit
MHz
75
120
pF
15
20
33
100
160
350 ns
27
50
THERMAL CHARACTERISTICS
R_{θth(j-case)} Thermal Resistance Junction to case
R_{θth(j-amb)} Thermal Resistance Junction to ambient
44 °C/W
219 °C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3084
Issue 1