BFX38_02 Datasheet, PDF (2/3 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX38
BFX39
BFX40
BFX41
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
I_CBO
V_(BR)CBO
Parameter
Test Conditions
BFX38 V_CB = - 40V I_E = 0
Collector Cutoff Current
BFX39
BFX40
T_amb = 125°C
V_CB = - 50V I_E = 0
BFX41 T_amb = 125°C
BFX38
BFX39
Collector-Base Breakdown Voltage
BFX40
BFX41
I_C = -10µA
I_C = -10µA
I_E = 0
I_E = 0
Min.
-55
- 75
Collector Emitter Sustaining
V_{CEO(SUS)* Voltage}
BFX38 _{IC = -10mA IB = 0}
-55
BFX39
BFX40 _{IC = -10mA IB = 0}
-75
BFX41
Emitter - Base
V_{(BR)EBO Breakdown Voltage}
ALL
I_E = -10µA I_C = 0
-5
V_CE(SAT)*
V_BE(SAT)*
Collector- Emitter Saturation
Voltage
Base - Emitter Saturation
Voltage
ALL ^{IC = -150mA}
I_C = - 500mA
ALL ^{IC = -150mA}
I_C = - 500mA
BFX38 BFX40
I_B = -15mA
I_B = - 50mA
I_B = -15mA
I_B = - 50mA
I_C = - 100µA V_CE = - 5V
60
I_C = - 100mA V_CE = - 5V 85
I_C = - 500mA V_CE = - 5V 60
BFX39 BFX41
h_FE*
DC Current Gain
I_C = - 100µA V_CE = - 5V
30
I_C = - 100mA V_CE = - 5V 40
I_C = - 500mA V_CE = - 5V 25
I_C = - 1A
V_CE = - 5V
BFX38
30
BFX39
15
BFX40
25
BFX41
10
I_C = - 100mA V_CE = - 5V
T_amb = - 55°C
BFX38 BFX40
30
BFX39 BFX41
15
Typ.
- 0.2
-0.25
- 0.2
-0.25
- 0.12
- 0.3
- 0.8
-0.9
90
130
120
45
70
65
Max.
- 50
-50
- 50
-50
Unit
nA
µA
nA
µA
V
V
V
- 0.15
V
- 0.5
- 0.9
V
-1.1
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3084
Issue 1