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| 2N6300 Datasheet, PDF (3/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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2N6300
2N6301
ELECTRICAL CHARACTERISTICS 2N6301 (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
OFF CHARACTERISTICS
Collector â Emitter Sustaining
VCEO(sus) Voltage 1
IC = 100mA
IB = 0
80
ICEO
ICEX
IEBO
Collector Cutâoff Current
Collector Cutâoff Current
Emitter Cutâoff Current
ON CHARACTERISTICS 1
VCE = 40V
IB = 0
VCE = Rated VCB VBE(off) = 1.5V
TC = 150°C
VBE = 5V
IC = 0
hFE
DC Current Gain
VCE = 3V
IC = 4A
750
VCE = 3V
IC = 8A
100
VCE(sat)
Collector â Emitter Saturation
Voltage
IC = 4A
IC = 8A
IB = 16mA
IB = 80mA
VBE(sat) Base â Emitter Saturation Voltage IC = 8A
IB = 80mA
VBE(on) Base â Emitter On Voltage
VCE = 3V
IC = 4A
DYNAMIC CHARACTERISTICS
Cob
Output Capacitance
VCB = 10V
f = 0.1MHz
IE = 0
Magnitude of Common Emitter
VCE = 3V
hfe
Small Signal Short Circuit Current IC = 3A
4.0
Transfer Ratio
f = 1MHz
hfe
Small Signal Current Gain
VCE = 3V
f = 1kHz
IC = 3A
300
Max. Unit
V
0.5 mA
0.5
mA
5.0
2 mA
18000
â
2.0
V
3.0
4.0 V
2.8 V
200 pF
â
â
Notes
1 Pulse test: tp = 300µs , Duty Cycle = 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979
Issue 1
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