2N6300 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

2N6300
2N6301
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
6.35 (0.250)
8.64 (0.340)
DARLINGTON SILICON
POWER TRANSISTORS
Designed for general purpose
amplifier and low frequency
switching applications.
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Pin 1 –Base
TO–66 (TO-213AA)
Pin 2 –Emitter
Case – Collector
FEATURES
• High DC Current Gain
• Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300
2N6301
V_CEO
Collector – Emitter Voltage
60V
80V
V_CBO
Collector – Base Voltage
60V
80V
V_EBO
Emitter – Base Voltage
5V
I_C
Collector Current
Continuous
8A
Peak
16A
I_B
Base Current
P_D
Total Dissipation @ T_C = 25°C
Derate above 25°C
120mA
100W
75W
0.571W/°C 0.428W/°C
T_STG , T_J
T_θJC
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
–65 to +200°C
1.75°C/W
2.33°C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3979
Issue 1