2N3810DCSM Datasheet, PDF (3/4 Pages) Seme LAB – DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

SEME
LAB
2N3810DCSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
TRANSISTOR MATCHING CHARACTERISTICS
h_FE1
h_FE2
Static Forward Current Gain
Balance Ratio
V_CE = –5V I_C = –100µA
0.9
See Note 2.
|V_BE1 – V_BE2| Base – Emitter Voltage
Differential
V_CE = –5V
I_C = –10µA to –10mA
V_CE = –5V I_C = –100µA
|∆(V_BE1 – V_BE2)∆T_A|
Base – Emitter Voltage
Differential
V_CE = –5V
T_A1 = 25°C
V_CE = –5V
T_A1 = 25°C
I_C = –100µA
T_A2 = –55°C
I_C = –100µA
T_A2 = 125°C
Typ.
Max. Unit
1
—
5
mV
3
0.8
mV
1
OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions ¹
Min.
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V_CE = –10V I_C = –100µA
R_G = 3kΩ
f = 100Hz
Noise Bandwidth = 20Hz
F
Spot Noise Figure
V_CE = –10V I_C = –100µA
R_G = 3kΩ
f = 1kHz
Noise Bandwidth = 200Hz
V_CE = –10V I_C = –100µA
R_G = 3kΩ
f = 10kHz
Noise Bandwidth = 2kHz
V_CE = –10V I_C = –100µA
_
F
Average Noise Figure
R_G = 3kΩ
Noise Bandwidth = 15.7kHz
See Note 3.
Typ.
Max. Unit
7
3
dB
2.5
3.5
dB
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h_FE1.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 1/95