2N3810DCSM Datasheet, PDF (2/4 Pages) Seme LAB – DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

SEME
LAB
2N3810DCSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions ¹
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V_(BR)CBO Collector – Base Breakdown Voltage I_C = –10µA
V_(BR)CEO* Collector – Emitter Breakdown Voltage I_C = –10mA
V_(BR)EBO Emitter – Base Breakdown Voltage
I_E = –10µA
I_CBO
Collector Cut-off Current
V_CB = –50V
I_EBO
Emitter Cut-off Current
V_EB = –4V
I_C = –10µA
I_C = –100µA
h_FE
V_BE
V_CE(sat)
h_ie
h_fe
h_re
h_oe
DC Current Gain
Base – Emitter Voltage
Collector – Emitter Saturation Voltage
Small Signal Common – Emitter
Input Impedance
Small Signal Common – Emitter
Current Gain
Small Signal Common – Emitter
Reverse Voltage Gain
Small Signal Common – Emitter
Output Admittance
I_C = –500µA
I_C = –1mA
I_C = –10mA
I_C = –100µA
I_B = –10µA
I_B = –100µA
I_B = –10µA
I_B = –100µA
V_CE = –10V
I_C = –1mA
f = 1kHz
I_E = 0
I_B = 0
I_C = 0
I_E = 0
T_A = 150°C
I_C = 0
V_CE = –5V
V_CE = –5V
T_A = –55°C
V_CE = –5V
V_CE = –5V
V_CE = –5V *
V_CE = –5V
I_C = –100µA
I_C = –1mA
I_C = –100µA
I_C = –1mA
V_CE = –5V I_C = –500µA
|h_fe|
Small Signal Common – Emitter
f = 30MHz
Current Gain
V_CE = –5V I_C = –1mA
f = 100MHz
C_obo
Common – Base Open Circuit
Output Capacitance
V_CB = –5V
f = 100kHz
I_E = 0
C_ibo
Common – Base Open Circuit
Input Capacitance
V_EB = –0.5V I_C = 0
f = 100kHz
Min.
–60
–60
–5
100
150
75
150
150
125
3
150
5
1
1
NOTES
* Pulse Test: t_p = 300µs, δ ≤ 2%.
1) Terminals not under test are open circuited under all test conditions.
Typ. Max. Unit
V
–10 nA
–10 µA
–20 nA
450
—
450
450
–0.7
–0.7
V
–0.8
–0.2
V
–0.25
30
kΩ
600
—
25 x 10^-4
60 µmho
—
5
4
pF
8
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 1/95