SML10SIC06Y Datasheet, PDF (2/2 Pages) Seme LAB – SILICON CARBIDE (SiC) SCHOTTKY DIODE

SILICON CARBIDE (SiC)
SCHOTTKY DIODE
SML10SIC06Y
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Static Characteristics
Symbols
VF
Parameters
Forward Voltage
IR
Reverse Current
Test Conditions
IF = 10A
TJ = 175°C
VR = 600V
TJ = 175°C
Dynamic Characteristics
Qc
Total Capacitive Charge
C
Total Capacitance
VR = 600V, IF = 10A
δi/δt = 500A/µs
VR = 1.0V, f = 1.0MHz
VR = 200V, f = 1.0MHz
VR = 400V, f = 1.0MHz
Min.
Typ.
1.5
2.0
10
20
Max.
1.8
2.4
50
200
Units
V
µA
25
nC
480
50
pF
42
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140_D) _ia.
3.81 (0.150)
123
2.54 (0.100)
BSC
0.64
0.89
((00..002355))Dia.
3.05 (0.120)
BSC
case
12
3
TO-257AA
Pin 1 – Cathode Pin 2 – Cathode Pin 3 – Anode
Case - Cathode
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