SML10SIC06Y Datasheet, PDF (1/2 Pages) Seme LAB – SILICON CARBIDE (SiC) SCHOTTKY DIODE

SILICON CARBIDE (SiC)
SCHOTTKY DIODE
SML10SIC06Y
• Hermetic Metal TO-257AA Package.
• Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit
low forward voltage and superb high temperature performance.
• Suitable for high-frequency hard switching applications,
where system efficiency and reliability are paramount.
• No reverse recovery time due to absence of minority
carrier injection.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VR
DC Reverse Voltage
600V
VRRM _{Repetitive Peak Reverse Voltage}
600V
IF
DC Forward Current (TJ = 175°C)
10A
IFRM
Repetitive Peak Forward Current ⁽¹⁾
67A
IFSM
Surge Peak Forward Current ⁽²⁾
250A
PD
Total Power Dissipation at
100W
Derate Above 25°C
0.5W/°C
TJ
Junction Temperature Range
-55 to +225°C
Tstg
Storage Temperature Range
-55 to +225°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
2.0
Units
°C/W
Notes
(1) T_c = 25°C, T_p = 10ms, Half Sine Wave, D = 0.3
(2) T_c = 25°C, T_p = 10µs
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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