IRFY240_11 Datasheet, PDF (2/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET

N-CHANNEL
POWER MOSET
IRFY240 / IRFY240M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
∆BVDSS
∆TJ
RDS(on)
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
VGS = 0
Reference
to 25°C
VGS = 10V
VGS = 10V
ID = 1.0mA
ID = 1.0mA
ID = 7.8A ⁽⁴⁾
ID = 12A ⁽⁴⁾
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
VDS = VGS
VDS ≥ 15V
ID = 250µA
I _DS = 7.8A ⁽⁴⁾
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS
Forward Gate-Source
Leakage
VGS = 20V
IGSS
Reverse Gate-Source
Leakage
VGS = -20V
Min. Typ Max. Units
200
V
0.29
V/°C
0.19
Ω
0.22
2
4
V
6.1
S(Ʊ)
25
µA
250
100
nA
-100
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
Qg ⁽⁵⁾
Qgs ⁽⁵⁾
Qgd ⁽⁵⁾
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 12A
VDS = 0.5BVDSS
VDD = 100V
ID = 12A
RG = 9.1Ω
1300
400
pF
130
60
10.6
nC
37.6
20
152
ns
58
67
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current ⁽¹⁾
VSD
Diode Forward Voltage
IS = 12A
VGS = 0 ⁽⁴⁾
trr
Reverse Recovery Time
IS = 12A
Qrr
Reverse Recovery Charge
VDD ≤ 50V
TJ = 25°C
TJ = 25°C
di/dt = 100A/µs ⁽⁴⁾
12
A
48
1.5
V
500
ns
5.3
µC
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Issue 2
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