IRFY240_11 Datasheet, PDF (1/3 Pages) Seme LAB – N-CHANNEL POWER MOSFET

N-CHANNEL
POWER MOSFET
IRFY240 / IRFY240M
• Low RDS(on) MOSFET Transistor
In A Hermetic Metal TO-257AB Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
200V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
12A
ID
Continuous Drain Current ^{Tc = 100°C}
7.8A
IDM
Pulsed Drain Current ⁽¹⁾
48A
PD
Total Power Dissipation at ^{Tc = 25°C}
60W
Derate Above 25°C
0.48W/°C
EAS
Single Pulse Avalanche Energy ⁽²⁾⁽⁵⁾
330mJ
IAR
Avalanche Current ⁽¹⁾⁽⁵⁾
12A
EAR
Repetative Pulse Avalanche Energy ⁽¹⁾⁽⁵⁾
6mJ
dv/dt
Peak Diode Recovery ⁽³⁾⁽⁵⁾
5V/ns
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
2.1
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters
LD
Internal Drain Inductance
LS
Internal Source Inductance
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Starting TJ = 25°C, L = 4.5mH, Peak IL = 12A, VGS = 10V
(3) @ ISD ≤ 12A, di/dt ≤ 150A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
(5) By Design Only, Not A Production Test.
Min.
Typ.
8.7
8.7
Max. Units
nH
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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