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| IRFY044C Datasheet, PDF (2/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | |||
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IRFY044C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain â Source Breakdown Voltage VGS = 0
ID = 1mA
60
âBVDSS Temperature Coefficient of
Reference to 25°C
âTJ Breakdown Voltage
ID = 1mA
Static Drain â Source OnâState
RDS(on) Resistance
VGS = 10V
ID = 20A
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250µA
2
gfs
Forward Transconductance
VDS ⥠15V
ID = 20A
17
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate â Source Leakage
VGS = 20V
IGSS Reverse Gate â Source Leakage
VGS = â20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
39
Qgs Gate â Source Charge
ID = 20A
6.7
Qgd Gate â Drain (âMillerâ) Charge
VDS = 0.5BVDSS
18
td(on) TurnâOn Delay Time
VGS = 10V
tr
Rise Time
VDD = 30V
td(off) TurnâOff Delay Time
ID = 20A
tf
Fall Time
RG = 9.1â¦
SOURCE â DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current
VSD Diode Forward Voltage
IS = 20A
VGS = 0
TJ = 25°C
trr
Reverse Recovery Time
IF = 20A
TJ = 25°C
Qrr
Reverse Recovery Charge
di / dt ⤠100A/µs VDD ⤠50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from 6mm down drain lead pad to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
Typ.
0.68
2400
1100
230
8.7
8.7
Max. Unit
V
V/°C
0.035 â¦
4
25
250
100
â100
V
S((â¦â¦)
µA
nA
pF
88
15
nC
52
23
130
ns
81
79
20
A
128
2.5
V
220 ns
1.6
µC
nH
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
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