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IRFY044C Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
IRFY044C
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3
3
.56
.81
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
60V
20A
0.035Ω
FEATURES
• HERMETICALLY SEALED TO–220 METAL
0.89
1.14
PACKAGE
2.54
BSC
2.65
2.75
• SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
• LIGHTWEIGHT
Ceramic Lead Seals
• ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FULL ASSESSMENT LEVEL
SEQUENCE A
SEQUENCE B
SEQUENCE C
SEQUENCE D
AVAILABLE SCREENINGS
IRFY044C.MOD
IRFY044CJ
IRFY004C-A
IRFY044CJXV
IRFY004C-B
IRFY044CJTX
IRF044C-C
IRFY044C-D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current
PD
Power Dissipation @ TC = 25°C
Linear Derating Factor
±20V
20A
20A
128A
60W
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95