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IRFN340SMD Datasheet, PDF (2/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET
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IRFN340SMD
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance4
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance4
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Ciss
Coss
Crss
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 6A
ID = 10A
ID = 250mA
IDS = 6A
VDS = 0.8BVDSS
TJ = 125°C
VGS = 0
VDS = 25V
f = 1MHz
Min.
400
2
4.9
Typ.
0.46
1400
3500
2300
Max. Unit
V
V/°C
0.55
0.70
4
25
250
100
–100
W
V
S((WW)
mA
nA
pF
Qg
Total Gate Charge 1
Qgs
Gate – Source Charge 1
Qgd Gate – Drain (“Miller”) Charge 1
VGS = 10V
ID = 10A
VDS = 0.5BVDSS
32
2.2
13.8
65
nC
10.0
40.5
td(on) Turn–On Delay Time
2.5
tr
td(off)
Rise Time
Turn–Off Delay Time
VDD = 200V
RG = 9.1W
ID = 10A
VGS = 10V
92
ns
79
tf
Fall Time
58
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 1
10
A
40
VSD Diode Forward Voltage4
trr
Reverse Recovery Time4
Qrr
Reverse Recovery Charge4
IS = 10A
TJ = 25°C
VGS = 0
IF = 10A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
1.5
V
600 ns
5.6 mC
ton
Forward Turn–On Time
Negligible
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
2.0
nH
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
6.5
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00