IRFN340SMD Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET

IRFN340SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
3 .6 0 (0 .1 4 2 )
M ax.
BV_DSS
I_D(cont)
R_DS(on)
400V
10A
0.55W
FEATURES
• HERMETICALLY SEALED SURFACE
2
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD1 PACKAGE
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Pad 1 – Source Pad 2 – Drain
Pad 3 – Gate
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 0 , T_case = 25°C)
10A
I_D
Continuous Drain Current (V_GS = 0 , T_case = 100°C)
6A
I_DM
Pulsed Drain Current ¹
40A
P_D
Power Dissipation @ T_case = 25°C
125W
Linear Derating Factor
1.0W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Energy ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
650mJ
10A
12.5mJ
4.0V/ns
T_J , T_stg
T_L
R_qJC
R_qJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.0°C/W
TBD
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ V_DD = 50V,Starting T_J = 25°C, E_AS =[0.5 * L* (I_L2) * [BV_DSS/(BV_DSS-V_DD)], Peak I_L = 10A V_GS = 10V,
2) 25 £ R_G £ 200W
3) I_SD £ 10A , di/dt £ 120A/ms , V_DD £ BV_DSS , T_J £ 150°C
4) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 7/00