IRFAG50 Datasheet, PDF (2/3 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

N-CHANNEL
POWER MOSET
IRFAG50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 250µA
RDS(on)
Static Drain-Source
On-State Resistance
VGS = 10V ID = 3.2A ⁽⁴⁾
VGS(th)
gfs
IDSS
IGSS
IGSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage
Drain Current
Forward Gate-Source
Leakage
Reverse Gate-Source
Leakage
VDS = VGS
VDS ≥ 100
VGS = 0
VGS = 20V
VGS = -20V
ID = 250µA
IDS = 3.2A ⁽⁴⁾
VDS = 0.8 × VDS(MAX)
TJ = 125°C
Min.
1000
2
5.2
Typ
1.7
7.8
Max.
2.0
4
250
1000
100
-100
Units
V
Ω
V
S(Ʊ)
µA
nA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
Qg
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 5.6A
VDS = 0.4 × VDS(MAX)
VDD = 500V
ID = 5.6A
RG = 6.2Ω RD = 91Ω
2800
400
pF
180
130 200
13
20
nC
74
110
20
30
29
44
ns
140 210
40
60
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current ⁽¹⁾
VSD
Diode Forward Voltage
IS = 5.6A
VGS = 0
trr
Reverse Recovery Time
IS = 5.6A
Qrr
Reverse Recovery Charge
VDD ≤ 50V
TJ = 25°C
TJ = 25°C
di/dt = 100A/µs ⁽⁴⁾
5.6
A
22
1.8
V
260 580 1200
ns
1.8
3.9
8.4
µC
Semelab Limited
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Document Number 8699
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