IRFAG50 Datasheet, PDF (1/3 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

N-CHANNEL
POWER MOSFET
IRFAG50
• Low RDS(on) Power MOSFET Transistor
In A Hermetic Metal TO3 Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
1000V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current ^{Tc = 25°C}
5.6A
ID
Continuous Drain Current ^{Tc = 100°C}
3.5A
IDM
Pulsed Drain Current ⁽¹⁾
22A
PD
Total Power Dissipation at ^{Tc = 25°C}
150W
Derate Above 25°C
1.2W/°C
EAS
Single Pulse Avalanche Energy ⁽²⁾
860mJ
dv/dt
Peak Diode Recovery ⁽³⁾
1.0V/ns
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
0.83 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters
LD
Internal Drain Inductance
LS
Internal Source Inductance
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, L = 52 mH, Peak IL = 5.6A, Starting TJ = 25°C, RG = 25Ω
(3) @ ISD ≤ 5.6A, di/dt ≤ 120A/µs, VDD ≤ 600V, TJ ≤ 150°C, Suggested RG = 6.2Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
Min.
Typ.
5
13
Max. Units
nH
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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