IRF9130_03 Datasheet, PDF (2/2 Pages) Seme LAB – P–CHANNEL POWER MOSFET

IRF9130
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BV_DSS Drain – Source Breakdown Voltage
∆BV_DSS Temperature Coefficient of
∆T_J Breakdown Voltage
Static Drain – Source On–State
R_{DS(on) Resistance 1}
V_GS(th) Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS Zero Gate Voltage Drain Current
I_GSS
I_GSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
V_GS = 0
I_D = –1mA
Reference to 25°C
I_D = –1mA
V_GS = –10V
V_GS = –10V
V_DS = V_GS
V_DS ≥ –15V
V_GS = 0
V_GS = –20V
V_GS = 20V
I_D = –7.0A
I_D = –11A
I_D = –250µA
I_DS = –7.0A
V_DS = 0.8 x Max
T_J = 125°C
–100
–2
3
C_DC
C_iss
C_oss
C_rss
Drain to Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0
V_DS = – 25V
f = 1MHz
Q_g
Total Gate Charge
V_GS = –10V
15
Q_gs Gate – Source Charge
I_D = –11A
1.0
Q_gd Gate – Drain (“Miller”) Charge
V_DS = 0.5 x max
2.0
t_d(on)
t_r
t_d(off)
t_f
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V_DD = –50V
I_D = –11A
R_G = 7.5Ω
SOURCE – DRAIN DIODE CHARACTERISTICS
I_S
Continuous Source Current
I_SM
Pulse Source Current ²
V_SD Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn–On Time
PACKAGE CHARACTERISTICS
I_S = –11A
T_J = 25°C
V_GS = 0
I_F = –11A
V_DD ≤ –50V
d_i / d_t ≤ –100A/µs T_J = 25°C
L_D
L_S
R_θJC
R_θCS
R_θJA
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Typ.
–0.087
12
860
350
125
Negligible
5.0
13
1.67
0.12
30
Max.
0.3
0.35
–4
–25
–250
–100
100
29
7.1
21
60
140
140
140
–11
–50
–4.7
250
3.0
Unit
V
V/°C
Ω
V
S( )
µA
nA
pF
nC
ns
A
V
ns
µC
nH
°C/W
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Document Number 5676
Issue 1