IRF9130_03 Datasheet, PDF (1/2 Pages) Seme LAB – P–CHANNEL POWER MOSFET

IRF9130
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
P–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
–100V
–11A
0.2Ω
FEATURES
20.32 (0.800)
18.80 (0.740)
dia.
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
• SCREENING OPTIONS AVAILABLE
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 25°C)
±20V
–11A
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
–7.0A
–50A
P_D
Power Dissipation @ T_case = 25°C
75W
Linear Derating Factor
0.6W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
81mJ
–11A
7.5mJ
–5.5V/ns
T_J , T_stg
T_L
Notes
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
–55 to +150°C
300°C
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ V_DD = –25V , L ≥ 1.0mH , R_G = 25Ω , Peak I_L = –11A , Starting T_J = 25°C
3) @ I_SD ≤ –11A , di/dt ≤ –140A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 7.5Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5676
Issue 1