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IRF9130SMD Datasheet, PDF (2/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
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IRF9130SMD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 5A
ID = 8A
ID = 250mA
IDS = 5A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
ID = 8A
VDS = 0.5BVDSS
Qgs Gate – Source Charge
ID = 8A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 50V
ID = 8A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current
VSD Diode Forward Voltage
IS = 8A
VGS = 0
TJ = 25°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS = 8A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
100
2
3
12.5
1.0
2
Typ.
0.1
860
350
125
8.7
8.7
Max. Unit
V
V/°C
0.35
W
0.4
4
V
S((WW)
25
mA
250
100
nA
-100
pF
29
nC
6.3
nC
27
60
140
ns
140
140
8
A
32
4.7
V
300 ns
3
mC
nH
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 09/00