IRF9130SMD Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

IRF9130SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
2
3 .6 0 (0 .1 4 2 )
M ax.
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V_DSS
I_D(cont)
R_DS(on)
-100V
-8A
0.35W
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pad 1 – Gate
SMD 1
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
(also available as IRFN9130SMD with Gate and Source reversed)
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current @ T_case = 25°C
8A
I_D
Continuous Drain Current @ T_case = 100°C
5A
I_DM
Pulsed Drain Current
40A
P_D
Power Dissipation @ T_case = 25°C
45W
Linear Derating Factor
0.36W/°C
T_J , T_stg
R_qJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website http://www.semelab.co.uk
Prelim. 09/00