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IRF9130 Datasheet, PDF (2/2 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS
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IRF9130
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
VGS = 0
ID = –1mA
Reference to 25°C
ID = –1mA
VGS = –10V
VGS = –10V
VDS = VGS
VDS ³ –15V
VGS = 0
VGS = –20V
VGS = 20V
ID = –7.0A
ID = –11A
ID = –250mA
IDS = –7.0A
VDS = 0.8 x Max
TJ = 125°C
–100
–2
3
CDC
Ciss
Coss
Crss
Drain to Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0
VDS = – 25V
f = 1MHz
Qg
Total Gate Charge
VGS = –10V
15
Qgs Gate – Source Charge
ID = –11A
1.0
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5 x max
2.0
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = –50V
ID = –11A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
PACKAGE CHARACTERISTICS
IS = –11A
TJ = 25°C
VGS = 0
IF = –11A
VDD £ –50V
di / dt £ –100A/ms TJ = 25°C
LD
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
RqJC
RqCS
RqJA
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Typ.
–0.087
12
860
350
125
Negligible
5.0
13
1.67
0.12
30
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Max. Unit
V
V/°C
0.3
0.35
–4
–25
–250
–100
100
W
V
S (É)
mA
nA
pF
29
7.1 nC
21
60
140
ns
140
140
–11
A
–50
–4.7 V
250 ns
3.0 mC
nH
°C/W
Prelim. 10/99