IRF9130 Datasheet, PDF (1/2 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9130
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
20.32 (0.800)
18.80 (0.740)
dia.
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
P–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
–100V
–11A
0.2W
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 25°C)
–11A
I_D
Continuous Drain Current
(V_GS = 0 , T_case = 100°C)
–7.0A
I_DM
Pulsed Drain Current ¹
–50A
P_D
Power Dissipation @ T_case = 25°C
75W
Linear Derating Factor
0.6W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
81mJ
–11A
7.5mJ
–5.5V/ns
T_J , T_stg
T_L
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
–55 to +150°C
300°C
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ V_DD = –25V , L ³ 1.0mH , R_G = 25W , Peak I_L = –11A , Starting T_J = 25°C
3) @ I_SD £ –11A , di/dt £ –140A/ms , V_DD £ BV_DSS , T_J £ 150°C , Suggested R_G = 7.5W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 10/99