D2282UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

SEME
LAB
D2282UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source Breakdown
BV_{DSS Voltage}
I_DSS
Zero Gate Voltage
Drain Current
I_GSS
V_GS(th)
g_fs
G_PS
η
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 0
I_D = 10mA
V_DS = 12.5V
V_GS = 0
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 750mW
V_DS = 6V
f = 1GHz
V_DS = 0
V_DS = V_GS
I_D = 0.2A
I_DQ = 75mA
40
1
0.18
8
40
10:1
C_iss
Input Capacitance
V_DS = 0V
f = 1MHz
V_GS = –5V
C_oss Output Capacitance
V_DS = 12.5V
f = 1MHz
V_GS = 0
C_rss
Reverse Transfer Capacitance ^{VDS = 12.5V}
f = 1MHz
V_GS = 0
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
1
mA
1
µA
5
V
mhos
dB
%
—
12
10
pF
1
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 70°C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 7/96