D2282UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
SEME
LAB
MECHANICAL DATA
Dimensions in mm.
0 .3 2
0 .2 4
16˚
m ax.
0 .1 0
0 .0 2
13˚
1 .7 0
m ax.
10˚
m ax.
6 .7
6 .3
3 .1
2 .9
4
3 .7 7 .3
3 .3 6 .7
1
2
3
1 .0 5
0 .8 5
PIN 1
PIN 3
GATE
SOURCE
2 .3 0
4 .6 0
0 .8 0
0 .6 0
SOT–223
PIN 2
PIN 4
DRAIN
DRAIN
D2282UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 6V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 8dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
2W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
400mA
T_stg
Storage Temperature
–65 to 125°C
T_j
Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 7/96