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| D2225UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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D2225UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BVDSS
DrainâSource Breakdown
Voltage
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 0
VDS = VGS
ID = 0.2A
TOTAL DEVICE
PO = 5W
VDS = 12.5V
f = 1GHz
IDQ = 0.2A
0.5
0.18
10
40
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 0V VGS = â5V f = 1MHz
Output Capacitance
VDS = 12.5V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1
mA
1
µA
7
V
S
dB
%
â
12
pF
10
pF
1
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ⤠2%
THERMAL DATA
RTHjâcase
Thermal Resistance Junction â Case
Max. 6°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
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