D2225UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D2225UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
8
1
GOLD METALLISED
N
MULTI-PURPOSE SILICON
D
7
2
CB
P
DMOS RF FET
6
3
5
4
5W – 12.5V – 1GHz
PUSH–PULL
H
K
L
M
J
E
F
G
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN 1
PIN 3 – DRAIN 2
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE 2
PIN 7 – GATE 1
PIN 8 – SOURCE
Dim. mm
A
4.06
B
5.08
C
1.27
D
0.51
E
3.56
F
4.06
G
1.65
H
0.76
J
0.51
1.02
K
45°
L
0°
7°
M
0.20
N
2.18
P
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
17.5W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
4A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website http://www.semelab.co.uk
Prelim. 2/99