D2089UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D2089UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
|_D = 10mA
65
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage
g_fs
Forward Transconductance*
P_out Power Output
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 20V
V_DS = 0
I_D = 10mA
V_DS = V_GS
V_DS = 10V
I_D = 0.2A
V_DS = 28V
I_DQ = 75mA
f = 30MHz
P_in = 5mW
V_DS = 0V V_GS = –5V f = 1MHz
V_DS = 28V V_GS = 0 f = 1MHz
1
0.18
750
Typ.
Max. Unit
V
1
mA
1
µA
7
V
mhos
mW
12
6
pF
0.5
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 30°C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 5/96