D2089UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
H
4
B
3
2
PIN 1
PIN 3
C
(2 pls)
A
SOURCE
SOURCE
1
G
(2 pls)
D
F
E
PIN 2
PIN 4
GATE
DRAIN
DIM Millimetres
A
25.40
B
45°
C
0.76
D
5.21 DIA
E
1.02
F
0.13
G
3.18
H
3.18
Tol.
0.25
5°
0.05
0.13
0.13
0.02
0.13
REF
Inches
1.00
45°
0.030
0.205
0.040
0.005
0.125
0.125
Tol.
0.010
5°
0.002
0.005
0.005
0.001
0.005
REF
TetraFET
D2089UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W – 28V – 2GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
4W
BV_DSS
Drain – Source Breakdown Voltage
65V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
1A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 5/96